Parent Category: Rocktabs Archive

GaN on Si HEMT Device

The MAGX-100027-300C0P is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 300 W (54.8 dBm) in a plastic package. The MAGX-100027-300C0P is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.

MACOM
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