Parent Category: 2014 New Products

HEMT Cree’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package, type 440215. Creecree.com