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Parent Category: 2014 New Products
HEMT Cree’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package, type 440215. Creecree.comCurrent Issue
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