Articles
Parent Category: 2014 New Products
HEMTs
Cree released two new unmatched 50V gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in high power broadband amplifier, CW, and pulsed applications. They exhibit high efficiency, high gain, and wide bandwidth capabilities, in addition to high power density, low parasitics, and high current gain cutoff frequency (FT).
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