Parent Category: 2014 New Products

SiC MOSFET

Richardson RFPD, Inc. announced availability and full design support capabilities for a new silicon carbide power Z-FET® from Cree, Inc. The C2M0040120D is a 1200V, 40mOhm RDS(on) SiC MOSFET that features N-channel enhancement mode and is available in a TO-247-3 package. Benefits include higher system efficiency, reduced cooling requirements, and increased system switching frequency and reliability. 

Richardson RFPD
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