Parent Category: 2014 New Products

Transistors

Richardson RFPD announced that it is accepting orders for five new discrete GaN transistors from TriQuint. The new discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) offer a range of pulsed output power covering 10W to 285W, with operating ranges from DC to 6 GHz.

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