Parent Category: 2013 New Products

HEMT

The TGF2023-2-01 is a discrete 1.25 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint's proven 0.25 um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz.

TriQuint Semiconductor
triquint.com